SEMICONDUCTOR POSITIONAL SENSITIVE DETECTORS BASED ON SI (LI) P-I-N STRUCTURES OF LARGE SIZES

Authors

  • Toshmurodov Yorkin Kahramonovich Karshinsky State University Karshi, Uzbekistan.
  • Shukurov Begzod Uktam ugli Karshinsky State University Karshi, Uzbekistan

Keywords:

Semiconductor position, PSCD, Si (Li) p-i-n structure, energy physics

Abstract

Semiconductor position-sensitive detectors (PSCD) based on Si (Li) p-i-n structure has been used in recent years as precision instruments, especially in experiments in high energy physics. The advent of detectors of a larger area [1] caused great interest in them as position-sensitive detectors of large volumes,the study of weakly intense charged particles for environmental protection among and SES.

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Published

2021-01-30

Issue

Vol. 13 No. 1 (2021): GTIMSC-2021

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

How to Cite

SEMICONDUCTOR POSITIONAL SENSITIVE DETECTORS BASED ON SI (LI) P-I-N STRUCTURES OF LARGE SIZES. (2021). Archive of Conferences, 13(1), 163-164. https://conferencepublication.com/index.php/aoc/article/view/600

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