SEMICONDUCTOR POSITIONAL SENSITIVE DETECTORS BASED ON SI (LI) P-I-N STRUCTURES OF LARGE SIZES
Article Sidebar
Published:
Jan 30, 2021
Keywords:
Semiconductor position, PSCD, Si (Li) p-i-n structure, energy physics
Main Article Content
Abstract
Semiconductor position-sensitive detectors (PSCD) based on Si (Li) p-i-n structure has been used in recent years as precision instruments, especially in experiments in high energy physics. The advent of detectors of a larger area [1] caused great interest in them as position-sensitive detectors of large volumes,the study of weakly intense charged particles for environmental protection among and SES.
Article Details
How to Cite
Toshmurodov Yorkin Kahramonovich, & Shukurov Begzod Uktam ugli. (2021). SEMICONDUCTOR POSITIONAL SENSITIVE DETECTORS BASED ON SI (LI) P-I-N STRUCTURES OF LARGE SIZES. Archive of Conferences, 13(1), 163-164. Retrieved from https://conferencepublication.com/index.php/aoc/article/view/600
Section
Articles
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.