VOLTAGE AND VOLTAGE CHARACTERISTICS SI (LI) P-I-N DETECTORS

Abstract

In world practice, the development of uncooled detectors of small sizes. The creation of large-sized silicon detectors has its own characteristics and difficulties, requiring the search for new scientific, technical and technological solutions. In this regard a deep understanding of the physical processes associated with the relationship of parameters is required initial crystal of large diameters with the formation of high-quality detector structures like p-n or p-i-n junctions [1-3].