STUDY OF VOLTAGE CHARACTERISTICS OF THE SOLAR ELEMENT nCdS / pCdT? WITH A THIN TRANSITION i-LAYER DEPENDING ON TEMPERATURE

Authors

  • Sh.B. Utamuradova Research Institute of Semiconductor Physics and Microelectronics at
  • S .A.Muzafarova National University of Uzbekistan named after Mirzo Ulugbek, Tashkent, Uzbekistan

Keywords:

cadmium sulfide, cadmium telluride, interface, thin-film solar cells, solid solution, nanolayer, thickness, band gap.

Abstract

In this work, the current-voltage characteristics of a thin-film CdS / CdTe solar cell with a transition i-layer of the interface from a solid solution CdTe1-xSx were investigated depending on the temperature. trap density, metal function, temperature, which can affect the efficiency of a CdS / CdTe solar cell.

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Published

2020-11-12

Issue

Vol. 9 No. 1 (2020): IGT-2020

Section

Articles

License

Copyright (c) 2020 Sh.B. Utamuradova, S .A.Muzafarova

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

How to Cite

STUDY OF VOLTAGE CHARACTERISTICS OF THE SOLAR ELEMENT nCdS / pCdT? WITH A THIN TRANSITION i-LAYER DEPENDING ON TEMPERATURE. (2020). Archive of Conferences, 9(1), 136-138. https://conferencepublication.com/index.php/aoc/article/view/350